The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Oct. 08, 2002
Yoshitaka Ootsu, Hyogo, JP;
Takayuki Igarashi, Tokyo, JP;
Other;
Abstract
In a capacitor formation area A , a capacitor C is formed. The capacitor is constituted by a lower-layer electrode-use polysilicon layer (lower-layer electrode) formed on a LOCOS separation film , a nitride film (dielectric film) and an upper-layer electrode-use polysilicon layer (upper-layer electrode). In this case, the lower-layer electrode-use polysilicon layer and the nitride film are formed as the same plane pattern. In CMOS formation area A , an NMOS transistor Q is formed on a P-well region and a PMOS transistor Q is formed in an N-well region . Both of the gate electrodes of NMOS transistor Q and NMOS transistor Q are formed by the upper-layer electrode-use polysilicon layer