The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2004

Filed:

Apr. 09, 2003
Applicant:
Inventors:

Antonella Julie Petrella, Coogee, AU;

Robert Norman Lamb, Engadine, AU;

Nicholas Kenneth Roberts, Kirrawee, AU;

Assignee:

Unisearch Limited, Sydney, AU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/640 ;
U.S. Cl.
CPC ...
C23C 1/640 ;
Abstract

The present invention relates to a method of growing a ZnO film using chemical vapour deposition (CVD), and to a ZnO film grown according to the method. The method includes providing a precursor in vapour form, the precursor substantially comprising Zn O(O CNR R ) , where R and R are any combination of akyl or perfluoroalkyl groups, and decomposing at least some of the vapour at the surface of the substrate such that the film of zinc oxide forms. An advantage of using this precursor material is that, unlike in the prior art, no deliberate introduction of water vapour to improve christallographic orientation is required. Higher purities in oxide films are produced.


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