The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2004

Filed:

Sep. 15, 2003
Applicant:
Inventors:

Yoshinori Takano, Ichikawa, JP;

Tadayuki Taura, Zushi, JP;

Toru Tanzawa, Ebina, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ; G11C 1/606 ;
U.S. Cl.
CPC ...
G11C 1/604 ; G11C 1/606 ;
Abstract

A non-volatile semiconductor memory device includes: an array of electrically rewritable nonvolatile data storage memory cells each having a transistor structure with a control gate; reference current source circuit configured to generate a first reference current adaptable for use during an ordinary read operation and a second reference current for use during a verify-read operation for data status verification in one of writing and erasing events; a sense amplifier configured to compare read currents of a selected memory cell as selected during the ordinary read operation and the verify-read operation with the first and second reference currents respectively to thereby perform data detection; and a driver configured to give an identical voltage to the control gate of the selected memory cell presently selected during the ordinary read operation and the verify-read operation.


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