The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Oct. 15, 2001
Richard Kane Stair, Richardson, TX (US);
Gabriel A. Rincon-Mora, Atlanta, GA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A system and method to extract a threshold voltage for a MOSFET include first and second stages, which include inputs that receive functionally related input currents, are connected to each other. The first stage includes a second input that is coupled to a corresponding input of the second stage through part of a voltage divider. Another part of the voltage divider is coupled between an internal gate node and the input of the second stage that receives the respective input current. The input of the second stage that receives the respective input current also provides an output voltage substantially equal to the threshold voltage for one or both of the MOSFETs.