The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Oct. 08, 2002
Applicant:
Inventors:
Hin Fai Chau, Fremont, CA (US);
Clarence John Dunnrowicz, Santa Cruz, CA (US);
Yan Chen, Fremont, CA (US);
Chien Ping Lee, Fremont, CA (US);
Assignee:
EIC Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9737 ;
U.S. Cl.
CPC ...
H01L 2/9737 ;
Abstract
The safe operating area (SOA) in a heterojunction bipolar transistor is improved by inserting a material between the collector and subcollector of the transistor with the insertion layer being a material having a wider energy bandgap than the material of the collector. The insertion layer increases the breakdown field at the collector-subcollector junction and thereby increases the Kirk effect induced breakdown voltage.