The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Jun. 26, 2002
Shigeru Kojima, Kanagawa, JP;
Katsuya Shirai, Kanagawa, JP;
Yoshifumi Mori, Chiba, JP;
Atsushi Toda, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
There is provided a light emitting device and a process for producing the same in that the light emission efficiency is high, the range of selection of the material is broad, and a device array of a large area can be formed. On a substrate comprising quartz glass, an n-type clad layer comprising a non-single crystal body of n-type AlGaN, a light emitting layer containing plural microcrystals comprising ZnO, and a p-type clad layer comprising a non-single crystal body of p-type BN are laminated in this order. Between the n-type clad layer and the p-type clad layer an insulating layer is formed to fill the gap among the microcrystals to prevent a leaking electric current. The insulating layer is formed by oxidizing the surface of the n-type clad layer Because the light emitting layer contains the plural microcrystals having an increased crystallinity, the light emission efficiency is increased, the range of selection of the materials of the light emitting layer the n-type clad layer the p-type clad layer and the substrate is broadened, and a device array of a large area can be formed.