The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2004

Filed:

Nov. 15, 2001
Applicant:
Inventors:

Yasushi Iyechika, Tsukuba, JP;

Yoshihiko Tsuchida, Tsukuba, JP;

Yasuyuki Kurita, Tsukuba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/112 ;
U.S. Cl.
CPC ...
H01L 3/112 ;
Abstract

Provide is a 3-5 group compound semiconductor having a concentration of a p-type dopant of 1×10 cm or more and 1×10 cm or less, which can be laminated to control the carrier concentration of an InGaAlN-type mixed crystal in a low range with high reproducibility. Also provided is a 3-5 group compound semiconductor in which the carrier concentration of an InGaAlN-type mixed crystal is controlled in a low range with high reproducibility, and a light emitting device having high light emitting efficiency.


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