The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2004

Filed:

Nov. 19, 2001
Applicant:
Inventors:

Jung-Kee Yoon, Uiwang-Si, KR;

Chang-Won Kim, Seoul, KR;

Assignee:

DRTech Co., Ltd., Chungchyungbook-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/20 ;
U.S. Cl.
CPC ...
G01T 1/20 ;
Abstract

A structure which prevents the distortion of the TFT characteristics caused by an electric charge formed on the surface of a protecting layer which exists on the TFT and a method for manufacturing the TFT. A switching device of an X-ray sensor comprises a TFT provided on a transparent substrate, a first protecting insulation layer which covers the TFT, storage capacity electrodes connected to a ground wire on the first protecting insulation layer, a second protecting insulation layer which covers the storage capacity electrode formed on the first protecting insulation layer, and a pixel electrode connected to one terminal of the TFT on the second protecting insulation layer, at least one portion of the storage capacity electrodes shielding the TFT region.


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