The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
May. 23, 2001
Rosalinda M. Ring, Hillsboro, OR (US);
Susan Xia Li, Fremont, CA (US);
Richard Blish, II, Saratoga, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Gas-assisted etching (GAE) for integrated circuit dies is enhanced via a method and system that enable halide-assisted etching of dies having copper material. According to an example embodiment of the present invention, an integrated circuit die having copper is etched using a focused ion beam (FIB) and a halide etch gas, such as chlorine. A selected amount of oxygen-containing gas is supplied to the die to react with the halide and prevent the corrosion of exposed copper material in the die. In this manner, the benefits of halide-assisted etching are realized while inhibiting the corrosion of copper that typically occurs with integrated circuit dies having copper material.