The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Apr. 09, 2002
Dawn M. Hopper, San Jose, CA (US);
Minh V. Ngo, Fremont, CA (US);
Mark S. Chang, Los Altos, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for filling an isolation trench structure during a semiconductor fabrication process is disclosed. The method includes a two-step deposition process that includes depositing a silicon-rich liner on the trench surface, and thereafter, filling the isolation trenches with an oxide utilizing a biased high density plasma deposition process. In a preferred embodiment, the silicon-rich liner is an in-situ HDP liner having a thickness of between 100 and 400 Angstroms, and preferably 200 Angstroms. Depositing a silicon-rich liner on the trench surface prior to depositing the high density plasma oxide eliminates the formation of defects at the surface of the isolation trench structure. Thus, the quality of the oxide fill is improved, as is yield and device performance.