The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Oct. 08, 1998
Applicant:
Inventor:
Guo-Qiang Patrick Lo, San Jose, CA (US);
Assignee:
Integrated Device Technology, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method for fabricating a MOSFET structure is disclosed. A coating is provided on the upper surface of a gate. Thereafter doped regions are implanted into the substrate. A layer is provided over the MOSFET structure and etched to form spacers. The MOSFET structure is reacted with salicide-forming reactant to produce a salicide MOSFET.
Quick Actions:
Lo, Guo-Qiang. (2004). Method for forming a salicided mosfet structure with tunable oxynitride spacer (U.S. Patent No. 6806154). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6806154
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile