The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Dec. 26, 2003
Cheolsoo Park, Seoul, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
According to one example method of fabricating a semiconductor memory device, an isolation layer and a capping layer are formed on a silicon substrate, sequentially. By an epitaxial silicon growth process, an epitaxial active region is formed. A gate insulation layer and a gate electrode are then formed on the epitaxial active region, sequentially. Subsequently, a bit line contact plug and a storage node contact plug are epitaxially formed on the epitaxial active region. A lower interlayer insulation layer is formed on the resultant structure and planarized. An upper interlayer insulation layer is formed on the lower interlayer insulation layer and a bit line is formed therein. An additional upper interlayer insulation layer is then formed on the entire surface of the resultant structure and a storage node electrode is formed through the additional upper and the upper interlayer insulation layer to be connected to the storage node contact.