The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Dec. 26, 2002
Applicant:
Inventors:
Hyun-Seok Lim, Suwon, KR;
In-Sun Park, Suwon, KR;
Sang-Bum Kang, Seoul, KR;
Jong-sik Chun, Byeonggi-do, KR;
Seong-Geon Park, Yongin, KR;
In-Su Ha, Yongin, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
The present invention discloses a method of manufacturing a semiconductor device having an upper capacitor electrode and a node resistor, including depositing a thin film at a first deposition rate on an edge portion of a wafer and at a second deposition rate on a central portion of the wafer to form the upper capacitor electrode and the node resistor, thereby improving step coverage of the upper capacitor electrode while simultaneously improving resistance distribution of the node resistor.