The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
May. 09, 2003
Scott A. McHugo, Menlo Park, CA (US);
Gregory N. DeBrabander, San Jose, CA (US);
Agilent Technologies, Inc., Palo Alto, CA (US);
Abstract
A method for forming a heterojunction bipolar transistor (HBT) includes forming an etch mask a top layer of the HBT to expose a portion of the emitter cap layer, and selectively etching the exposed portion of the emitter cap layer to (1) form a reentry feature and (2) to expose a portion of the emitter layer. The method further includes selectively etching the exposed portion of the emitter layer to expose a portion of the base layer, and forming a metal layer over the exposed portion of the base layer and the exposed portion of the emitter cap layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile