The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Oct. 30, 2002
Applicant:
Inventors:
Norikatsu Koide, Nagoya, JP;
Junji Yamamoto, Kitakatsuragi-gun, JP;
Tsuyoshi Dohkita, Yamatotakada, JP;
Nobuhiko Sawaki, 1-6-33, Kitachikusa, Chikusa-ku, Nagoya-shi, Aichi, JP;
Yoshio Honda, Nagoya, JP;
Yousuke Kuroiwa, Matsusaka, JP;
Masahito Yamaguchi, Ngoya, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of openings with nitride semiconductor materials. A width between two adjacent openings of the plurality of openings of the mask layer is 10 &mgr;m or less.