The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Aug. 15, 2002
L. Karsten V. Lindstrom, Hagersten, SE;
N. Peter Blixt, Hagersten, SE;
Svante H. Soderholm, Vasteras, SE;
Lauerant Krummenacher, Huddinge, SE;
Christofer Silvenius, Stockholm, SE;
Anand Srinivasan, Huddinge, SE;
Carl-Fredrik Carlstrom, Farsta, SE;
Comlase AB, Hagersten, SE;
Abstract
The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum. Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.