The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2004

Filed:

Jul. 11, 2003
Applicant:
Inventors:

Charles E. Bryson, III, Morgan Hill, CA (US);

Frank J. Grunthaner, Glendale, CA (US);

Paula J. Grunthaner, Glendale, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 3/7252 ; H01J 3/304 ;
U.S. Cl.
CPC ...
H01J 3/7252 ; H01J 3/304 ;
Abstract

A vacuum window transmitting keV electrons and usable for high-pressure electron analysis such as XPS and AES in which the sample is positioned outside the UHV analyzer chamber, possibly in a controlled gas environment, relatively close to the window. The window includes a grid formed from a support layer and a thin window layer supported between the ribs and having a thickness preferably of 2 to 3 nm. The window and support layers may be deposited on a silicon wafer and the support layer is lithographically defined into the grid. The wafer is backside etched to expose the back of the grid and its supported window layer. Such a window enables compact and easily used electron analyzers and further allows control of the gas environment at the sample surface during analysis.


Find Patent Forward Citations

Loading…