The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2004

Filed:

Sep. 10, 2001
Applicant:
Inventor:

Yukio Asami, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/14763 ;
Abstract

A method for producing an electrode enabling fabrication of small electrodes at a high dimensional accuracy without being affected by the number of connections between chips, comprising the steps of forming an insulating film on an interconnection pattern of a semiconductor chip, forming a mask layer having an opening on the insulating film at a position where an electrode is to be formed, removing the insulating film within the opening by using the mask layer as a mask to expose a portion of the interconnection pattern, forming a conductor layer on the exposed interconnection pattern and the mask layer, removing the conductor layer formed on the mask layer while leaving the conductor layer formed on the exposed interconnection pattern, and removing the mask layer, and a method for producing a semiconductor device provided with such electrode.


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