The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Jun. 28, 2002
Prabhuram Gopalan, Fremont, CA (US);
K. Nirmal Ratnakumar, San Jose, CA (US);
Chandrasekhar R. Gorla, Seattle, WA (US);
Cypress Semiconductor Corp., San Jose, CA (US);
Abstract
A method for fabricating a bipolar transistor is provided. In some cases, the method may include patterning an epitaxial layer to expose one or more regions of a semiconductor topography. The method may further include depositing an intermediate layer above the exposed regions and remaining portions of the epitaxial layer. A conductive emitter structure may then be formed above and within the intermediate layer. In another embodiment, the method may include etching a first dielectric layer in alignment with a patterned base of a bipolar transistor while simultaneously etching a second dielectric layer in alignment with a patterned emitter structure of the bipolar transistor. In yet other embodiments, the method may include depositing an intermediate layer which is substantially etch resistant to a resist stripping process. In addition or alternatively, the intermediate layer may include etch characteristics that are substantially similar to a conductive layer formed above the intermediate layer.