The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Apr. 28, 2003
Applicant:
Inventor:
Kazutaka Manabe, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
In a semiconductor device ( ), plural diffusion layer areas ( ) are formed so that the impurity concentration of the diffusion layer area ( ) is set to be higher than that of the diffusion layer area ( ), and a first contact wire ( ) connected to the diffusion layer area ( ) having the higher impurity concentration is set to be larger in sectional area than a second contact wire ( ) connected to the diffusion layer area ( ) having the lower impurity concentration.