The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Jul. 09, 2003
Applicant:
Inventors:
Dong-Jun Kim, Suwon, KR;
Jin-Ho Kim, Seoul, KR;
Yong-Kyu Lee, Suwon, KR;
Min-Soo Cho, Sungnam-shi, KR;
Eui-Youl Ryu, Daejeon-shi, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract
In a non-volatile semiconductor memory device and a fabrication method thereof, a charge storage layer is formed on a substrate. A control gate layer is formed on the charge storage layer. A gate mask having a spacer-shape is formed on the control gate layer. The charge storage layer and the control gate layer are removed using the gate mask as protection to form a control gate and a charge storage region.