The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Apr. 22, 2003
Hsiao-Yi Lin, Hsinchu, TW;
Wei Chih Chang, Hsinchu, TW;
Toppoly Optoelectronics Corp., Chu-Nan, TW;
Abstract
A method of fabricating a thin film transistor (TFT) with self-aligned structure. A substrate is provided, with a semiconductor layer and gate insulation layer formed in sequence thereon, followed by formation of a conductive layer on the gate insulation layer, and definition of the conductive layer to form a gate conductive layer and a dummy conductive layer. The dummy conductive layer is on both sides of the gate conductive layer and provided with a gap therebetween. A first ion implantation is performed via the gap to form a lightly doped region on the semiconductor layer thereunder, and a sacrificial layer is formed to fill the gap. The dummy conductive layer is removed. The gate conductive layer and the remaining sacrificial layer are used as a mask. Finally, a second ion implantation is performed to form a heavily doped source/drain region on the semiconductor layer.