The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2004

Filed:

Jul. 12, 2000
Applicant:
Inventors:

Takatoshi Tsujimura, Fujisawa, JP;

Takashi Miyamoto, Chofu, JP;

Osamu Tokuhiro, Shiqa-ken, JP;

Mitsuo Morooka, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/136 ;
U.S. Cl.
CPC ...
G02F 1/136 ;
Abstract

The present invention reduces the number of necessary steps in a thin-film-transistor manufacturing process and prevents an abnormal potential from being generated due to a leakage current from another signal line. A thin film transistor comprises a gate electrode disposed on a predetermined substrate and formed in a predetermined pattern, a semiconductor layer formed correspondingly to patterning of the gate electrode , a pixel electrode interposed by the semiconductor layer, and a signal electrode interposed by the semiconductor layer and disposed at a predetermined interval from the pixel electrode , in which the signal electrode is disposed at such a position where the signal electrode prevents crosstalk leakage current flowing from adjacent signal lines and to the pixel electrode via the semiconductor layer.


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