The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Dec. 14, 2001
Applicant:
Inventors:
Assignee:
Taiwan University, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01P 1/10 ;
U.S. Cl.
CPC ...
H01P 1/10 ;
Abstract
The present invention provides a millimeter-wave passive FET switch by using impedance transformation network to transfer the effective capacitance seen from the drain to source of an FET at off-state to low impedance, while transfer low impedance seen at on-state to high impedance. Since both on-state and off-state are transferred to high impedance, and low impedance respectively, a high-performance switch can be achieved. Since the size of the transformation network is small, the performance of the switch can be promoted with low cost.
Wang, Huei. (2004). Millimeter-wave passive fet switch using impedance transformation networks (U.S. Patent No. 6801108). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6801108
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile