The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Oct. 02, 2002
Koichi Sugiyama, Kawasaki, JP;
Yoshihiro Takao, Kawasaki, JP;
Shinji Sugatani, Kawasaki, JP;
Daisuke Matsunaga, Kawasaki, JP;
Takayuki Wada, Kawasaki, JP;
Tohru Fujita, Kawasaki, JP;
Hikaru Kokura, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
There are provided a gate electrode formed on a semiconductor substrate of one conductivity type via a gate insulating film, ion-implantation controlling films formed on both side surfaces of the gate electrode and having a space between the gate electrode and an upper surface of the semiconductor substrate, first and second impurity diffusion regions of opposite conductivity type formed in the semiconductor substrate on both sides of the gate electrode and serving as source/drain, a channel region of one conductivity type formed below the gate electrode between the first and second impurity diffusion regions of opposite conductivity type, and pocket regions of one conductivity type connected to end portions of the impurity diffusion regions of opposite conductivity type in the semiconductor substrate below the gate electrode and having an impurity concentration of one conductivity type higher than the channel region.