The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Nov. 19, 2002
Applicant:
Inventors:
Kazuo Nambu, Yamanashi, JP;
Junichiro Nikaido, Yamanashi, JP;
Assignee:
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ;
U.S. Cl.
CPC ...
H01L 3/10328 ;
Abstract
At least a channel layer and an etching stopper layer are provided on a semiconductor substrate in order, a gate electrode that Schottky-contacts the etching stopper layer is provided on the etching stopper layer, and InGaP having an In composition ratio of 0.66 through 0.9 is used as the etching stopper layer in a field effect type compound semiconductor device.
Nambu, Kazuo. (2004). Field-effect type compound semiconductor device and method for fabricating the same (U.S. Patent No. 6800878). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6800878
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile