The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Oct. 31, 2003
Applicant:
Inventor:
In-Cha Hsieh, Chupei, TW;
Assignee:
Hannstar Display Corp., Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01I 2/7108 ; H01I 2/904 ; H01I 2/976 ; H01I 3/1036 ; H01L 3/1112 ;
U.S. Cl.
CPC ...
H01I 2/7108 ; H01I 2/904 ; H01I 2/976 ; H01I 3/1036 ; H01L 3/1112 ;
Abstract
A CMOS process for double vertical channel thin film transistor (DVC TFT). This process fabricates a CMOS with a double vertical channel (DVC) structure and defines the channel without an additional mask. The DVC structure of the CMOS side steps the photolithography limitation because the deep-submicrometer channel length is determined by the thickness of gate, thereby decreasing the channel length of the CMOS substantially.