The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Aug. 16, 2001
Applicant:
Inventor:
Imad Mahawili, Grand Rapids, MI (US);
Assignee:
Hitachi Kokusai Electric, Inc., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B23K 1/000 ;
U.S. Cl.
CPC ...
B23K 1/000 ;
Abstract
A method of fabricating a semiconductor device includes providing a semiconductor substrate, forming an oxide layer in the substrate, and adding nitrogen atoms on top of the exposed surface of the oxide film to form a diffusion barrier.
Mahawili, Imad. (2004). Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication (U.S. Patent No. 6800830). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6800830
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile