The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Jun. 24, 2003
Applicant:
Inventors:
Assignee:
Anpec Electronics Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1332 ; H01L 2/1336 ; H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/1332 ; H01L 2/1336 ; H01L 2/13205 ; H01L 2/14763 ;
Abstract
A process for a trench power MOSFET comprises forming a trench on a semiconductor substrate and an oxide and nitride in the trench, etching the oxide and nitride to remain a part of them at the bottom of the trench, and subsequent procedure for the other structure of the trench power MOSFET. Due to the thick insulator formed at the bottom of the trench, the trench power MOSFET is improved by increased voltage endurance and reduced parasitic capacitance, and thereby the cell density is increased.