The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
May. 28, 2002
Huey-Ing Chen, Tainan, TW;
Wen-Chau Liu, Tainan, TW;
Yen-I Chou, Tainan, TW;
Chin-Yi Chu, Tainan, TW;
Hsi-Jen Pan, Tainan, TW;
National Science Council, Taipei, TW;
Abstract
A high-sensitivity Pd/InP hydrogen sensor was made by a) forming an n-type or p-type semiconductor film on a semiconductor substrate; b) forming a patterned first metal electrode on the semiconductor film, wherein the first metal electrode forms an Ohmic contact with the semiconductor film; and c) forming a second metal electrode on the semiconductor film, the second metal electrode being isolated from the first metal electrode, wherein the second metal electrode forms a Schottky contact with the semiconductor film, wherein a thickness of the second metal electrode and a material of which the second metal electrode is made enable a Schottky barrier height of the Schottky contact to decrease when hydrogen contacts the second metal electrode. The second metal electrode can be physical vapor deposited or electroless plated.