The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Jan. 15, 2002
Gregory D. Miller, Foster City, CA (US);
Silicon Light Machines, Inc., Sunnyvale, CA (US);
Abstract
A method for domain patterning of nonlinear ferroelectric materials. The method seeks to reduce the formation of random and spontaneous micro-domains that typically result during thermal cycling of ferroelectric materials and which leads to patterning defects and degraded performance. In accordance with the invention, a ferroelectric wafer is provided with a conductive layer on the top and bottom surfaces of the wafer. A sufficient bias voltage is applied across the conductive layers to polarize the wafer into a single direction. At least one of the conductive layers is selectively patterned to form a conductive domain template. A sufficient revise bias voltage is then applied to the conductive domain template and a remaining conductive layer to produce the domain patterned structure. According to a preferred embodiment of the invention, the ferroelectric wafer is formed of LiNbO or LiTaO .