The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Apr. 15, 2002
Applicant:
Inventors:
Akira Mitsui, Kanagawa, JP;
Hiroshi Ueda, Hyogo, JP;
Kouichi Kanda, Hyogo, JP;
Susumu Nakagama, Mie, JP;
Assignee:
Asahi Glass Company, Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/400 ; B28B 3/00 ; B28B 3/20 ;
U.S. Cl.
CPC ...
C23C 1/400 ; B28B 3/00 ; B28B 3/20 ;
Abstract
A sputtering target is provided that includes SiC and metallic Si and has an atomic ratio of C to Si of from 0.5 to 0.95 and a density of from 2.75×10 kg/m to 3.1×10 kg/m . The sputtering target is capable of forming at high speed a film that contains SiO as the main component and has a low refractive index. The sputtering target can be produced by a process in which a molded product of SiC is impregnated with molten Si.