The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Jul. 27, 2001
Gaku Sugahara, Nara, JP;
Isao Kidoguchi, Ako, JP;
Ryoko Miyanaga, Nara, JP;
Masakatsu Suzuki, Hirakata, JP;
Masahiro Kume, Otsu, JP;
Yusaburo Ban, Hirakata, JP;
Fukukazu Hirayama, Ako, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor laser device ( ) includes a resonant cavity ( ) in which a quantum well active layer ( ) made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film ( ) is formed on a reflective end facet ( ) opposite to a light-emitting end facet ( ) in the resonant cavity ( ). The end facet reflective film ( ) has a structure including a plurality of unit reflective films ( ), each of which is made up of a low-refractive-index film ( ) of silicon dioxide and a high-refractive-index film ( ) of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity ( ).