The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Sep. 26, 2000
Masaki Ueno, Osaka, JP;
Kiyotaka Tabuchi, Hyogo, JP;
Tatsuo Sawasaki, Nagano, JP;
Hiroshi Nishida, Osaka, JP;
Kazuhiro Mizukami, Osaka, JP;
Fuminori Hikami, Osaka, JP;
Western Digital (Fremont), Inc., Fremont, CA (US);
Abstract
The present invention provides a spin-valve magnetoresistance sensor in which are formed, on top of the substrate, free layers, and pinned layers, enclosing a nonmagnetic spacer layer, and an antiferromagnetic layer adjacent to the pinned layers. The sensor is also equipped with a back layer including at least two nonmagnetic metal layers adjacent to the free layers on the side of the free layers opposite the nonmagnetic spacer layer. The back layer has at least one nonmagnetic metal layer of Cu with high electrical conductivity, preferably formed adjacent to the free layers, as for example in a two-layer structure of Cu and Ru or a three-layer structure Ru/Cu/Ru. In addition to a high read output, fluctuations in H with the film thickness of the back layer can be suppressed and sensor characteristics stabilized, and high recording densities can be realized.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile