The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Nov. 26, 2002
Jane V. Oglesby, Mountain View, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A system and methodology are disclosed for forming a passive layer on a conductive layer. The formation can be done during fabrication of an organic memory cell, where the passive layer generally includes a conductivity facilitating compound, such as copper sulfide (Cu S). The conductivity facilitating compound is deposited onto the conductive layer via plasma enhanced chemical vapor deposition (PECVD) utilizing a metal organic (MO) precursor. The precursor facilitates depositing the conductivity facilitating compound in the absence of toxic hydrogen sulfide (H S), and at a relatively low temperature and pressure (e.g., between about 400 to 600 K and 0.05 to 0.5 Pa., respectively). The deposition process can be monitored and controlled to facilitate, among other things, depositing the conductivity facilitating compound to a desired thickness.