Semiconductor device having mosfet of trench structure and method for fabricating the same

Abstract

A semiconductor device has a cell region where transistor cells of a trench structure are arranged in a matrix form, in which a recessed trench is formed in a semiconductor layer, a gate oxide film is formed inside the recessed trench, and a gate electrode formed of polysilicon is disposed inside the recessed trench. To have contact with a gate wiring formed of a metal film, a gate pad disposed continuously to the gate electrode is placed inside a recessed part formed in the same depth as the recessed trench. Consequently, many transistor cells of the trench structure are formed in a matrix form. Even in a semiconductor device where the gate wiring formed of a metal film is contacted with the gate electrode, a semiconductor device of a structure allowing gate voltage to be increased sufficiently can be obtained.