The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Jul. 10, 2001
Tomotaka Fujisawa, Tokyo, JP;
Chihiro Arai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device having a photo diode which has substantially the same sensitivity to a plurality of light having different wavelengths, includes a first and a second conductivity type semiconductor layer formed at a surface layer portion of the first conductivity type semiconductor layer, wherein the sensitivity to light of a first wavelength and a second wavelength which is different from the first wavelength, are made substantially the same by designing a region in which a depletion layer spreads from a junction of the first and second conductivity type semiconductor layers and when an inverse bias is applied to the first and second conductivity type semiconductor layers, for example, by designing it to spread in a region of 3 to 6 &mgr;m or a region of 2 to 7 &mgr;m from the surface of the second conductivity type semiconductor layer in the depth direction.