The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Aug. 05, 2003
Hsin-Fei Meng, Shindian, TW;
Lai-Cheng Chen, Hsinchu, TW;
Sheng-fu Horng, Hsinchu, TW;
Lichi Lin, Chiai, TW;
Delta Optoelectronics, Inc., Hsinchu, TW;
Abstract
An active matrix organic light-emitting diode and manufacturing method thereof is provided. A thin film transistor having a gate, a source and a drain is formed over a substrate. An anode layer is formed over the substrate such that the anode layer connects electrically with the source terminal of the thin film transistor. An organic layer is formed to cover the anode layer and the thin film transistor. The organic layer between the source and the drain serves as a channel region of the thin film transistor. A cathode layer is formed over the organic layer. Since the molecules inside the organic layer are aligned in a direction from the source to the drain and perpendicular to a direction from the anode layer to the cathode layer, electron mobility at the channel region is enhanced and the emitting efficiency of the diode is increased.