The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Oct. 08, 2002
Karen Chu, Sunnyvale, CA (US);
Anil Vijayendran, Campbell, CA (US);
Michal Danek, Cupertino, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
The present invention provides a method to improve adhesion of barrier, metal, dielectric interfaces. In the process flow, a first barrier material is formed on a dielectric layer and bombarded with a plasma to effectively push the barrier material into the dielectric interface while leaving a portion of the barrier material over the dielectric. A second barrier material, which may or may not be the same as the first barrier material, is then formed on the remaining first barrier material. Advantageously, the method of the present invention allows the barrier material to be pushed into the dielectric to insure excellent adhesion, which prevents chemical mechanical polishing delamination. Furthermore, the presence of the first barrier material on the sidewalls of via apertures through the dielectric can prevent Cu poisoning from sputtered Cu or C O .