The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Apr. 22, 2002
Applicant:
Inventor:
Koji Suzuki, Mihama-ku, JP;
Assignee:
Kawasaki Microelectronics, Inc., Mihama-ku, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method of conditioning an etching chamber and a method of processing semiconductor substrates are disclosed. The etching chamber used for etching a BARC layer and a polysilicon layer is conditioned by oxygen containing gas atmosphere. Thereafter, a plurality of substrates having the polysilicon layer and the BARC layer are successively processed within the etching chamber to form patterns with a reduced pattern size variation.
Suzuki, Koji. (2004). Method of conditioning an etching chamber and method of processing semiconductor substrate using the etching chamber (U.S. Patent No. 6797634). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6797634
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile