The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Mar. 20, 2002
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A method for preventing void formation in a polycide structure includes sequentially depositing a gate oxide film, a polysilicon film doped with impurities, a seed film having a sufficient amount of silicon for reacting with an overlaying tungsten layer, a tungsten silicide precursor layer; and an etch mask made of an insulating material on a semiconductor substrate; performing a patterned etching using the etch mask; and heat-treating the resulting structure in an oxygen atmosphere at an elevated temperature and pressure to form a polycide structure wherein void formation is prevented. Since the seed film has a sufficient amount of amorphous silicon for reacting to the tungsten, migration of silicon atoms to the interfacial surface between the polysilicon film and the tungsten silicide precursor layer is prevented, thereby preventing the formation of voids in the polysilicon film.