The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Mar. 20, 2003
Applicant:
Inventors:
Mitsugu Wada, Kaisei-machi, JP;
Toshiaki Kuniyasu, Kaisei-machi, JP;
Toshiaki Fukunaga, Kaisei-machi, JP;
Assignee:
Fuji Photo Film Co., Ltd., Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/00 ; B32B 3/10 ; H01L 2/102 ;
U.S. Cl.
CPC ...
B32B 9/00 ; B32B 3/10 ; H01L 2/102 ;
Abstract
In a process for producing a substrate for use in a semiconductor element: a first GaN layer having a plurality of pits at its upper surface is formed; and then a second GaN layer is formed by growing a GaN crystal over the first GaN layer until the upper surface of the second GaN layer becomes flattened. Each of the above plurality of pits has an opening area of 0.005 to 100 &mgr;m and a depth of 0.1 to 10.0 &mgr;m.