The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Apr. 08, 2002
Atsushi Watanabe, Tsurugashima, JP;
Yoshinori Kimura, Tsurugashima, JP;
Hiroyuki Ota, Tsurugashima, JP;
Toshiyuki Tanaka, Tsurugashima, JP;
Hirokazu Takahashi, Tsurugashima, JP;
Mamoru Miyachi, Tsurugashima, JP;
Atsuya Ito, Tsurugashima, JP;
Pioneer Corporation, Tokyo, JP;
Abstract
A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa ) In N (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Al Ga In N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Al Ga In N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of Al Ga In N (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.