The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2004

Filed:

Jul. 02, 2002
Applicant:
Inventors:

Yuki Matsuda, Kodaira, JP;

Norihisa Yamamoto, Kodaira, JP;

Kazuhiro Matsushita, Kodaira, JP;

Kazuki Watanabe, Kokubunji, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract

A nonvolatile memory device and a data processing system with a reduced layout area are capable of efficiently generating a high voltage without deteriorating the charge transfer efficiency of a charge pump circuit. The charge pump circuit in a nonvolatile memory device includes a plurality of stages of charge pump unit circuits. A voltage generating unit provides, as a control signal to the gate of a first MOS transistor for transferring charges from a first capacitor of a charge pump unit circuit of one stage to a first capacitor at the next stage, a fourth signal having an amplitude of a difference voltage between the power supply voltage and the charge pump voltage of the first capacitor at the one stage. The fourth control signal is obtained from second and third signals each changing in amplitude of the power supply voltage. The second signal is supplied via a second capacitor.


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