The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2004

Filed:

Jan. 17, 2002
Applicant:
Inventors:

Hiroshi Morisaki, Tsurugashima-shi, Saitama, JP;

Shinji Nozaki, Kawasaki, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01C 2/348 ;
U.S. Cl.
CPC ...
H01C 2/348 ;
Abstract

In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. Then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor circuit elements or wiring patterns by oxidizing semiconductor substance in a gas mixture containing an oxygen gas in a chamber.


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