The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Aug. 26, 2003
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate having circuit patterns on opposed surfaces. The high thermo conductive ceramic substrate has on one surface a first circuit board of at least one layer having a first cavity structure, and on the other surface a second circuit board of at least one layer having a second cavity structure. A first active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode is integrated with the surface of the second circuit board, and the first circuit board surface is equipped with a cap or sealed with resin. A heat dissipation via is formed on the second circuit board, the high thermo conductive ceramic substrate and the external electrode on the surface of the second circuit board are connected thermally to each other, and heat of at least one active element selected from the first active element and the second active element is dissipated outward through the high thermo conductive ceramic substrate, the heat dissipation via and the external electrode on the surface of the second circuit board. The semiconductor device is downsized while securing transverse strength and heat dissipation characteristics of a heat-generating semiconductor element.