The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2004

Filed:

Sep. 12, 2002
Applicant:
Inventors:

Hiroshi Nakatsu, Tenri, JP;

Takahisa Kurahashi, Kashiba, JP;

Tetsuroh Murakami, Tenri, JP;

Shouici Ooyama, Ikoma-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9227 ;
U.S. Cl.
CPC ...
H01L 2/9227 ;
Abstract

A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an Al Ga As layer and the active layer, in this order. Part of the Al Ga As layer with respect to the is changed into an AlO layer (where y is a positive real number).


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