The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Sep. 12, 2001
Harold Wiesmann, Stony Brook, NY (US);
Vyacheslav Solovyov, Rocky Point, NY (US);
Brookhaven Science Associates, Upton, NY (US);
Abstract
The present invention is a method of forming thick films of crystalline YBa Cu O that includes forming a precursor film comprising barium fluoride (BaF ), yttrium (Y) and copper (Cu). The precursor film is heat-treated at a temperature above 500° C. in the presence of oxygen, nitrogen and water vapor at sub-atmospheric pressure to form a crystalline structure. The crystalline structure is then annealed at about 500° C. in the presence of oxygen to form the crystalline YBa Cu O film. The YBa Cu O film formed by this method has a resistivity of from about 100 to about 600 &mgr;Ohm-cm at room temperature and a critical current density measured at 77 K in a magnetic field of 1 Tesla of about 1.0×10 Ampere per square centimeter (0.1 MA/cm ) or greater.