The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Apr. 10, 2001
Universitat Gesamthochschule Kassel, Kassel, DE;
Abstract
The invention relates to a method for producing an aperture ( ) in a semiconductor material ( ) comprising the following steps: Preparing a semiconductor wafer ( ), for example, a (100)-oriented silicon wafer having an upper surface ( ) and a lower surface ( ); producing a cavity ( ) with a side wall ( ) in the upper surface ( ) of the semiconductor wafer ( ) by partially etching said upper surface ( ), whereby the cavity ( ) comprises a closed bottom area ( ) which faces the lower surface ( ) and which preferably has, in particular, a convex or, in particular, a concave corner or edge or a curvature of this type. After depositing an oxide layer ( ) on the semiconductor material ( ) at least in the area of the cavity ( ) by oxidizing the semiconductor material ( ), whereby the oxide layer ( ) preferably comprises an inhomogeneity ( ) in the bottom area ( ), the semiconductor material ( ) is selectively etched back on the lower surface ( ) of the semiconductor wafer ( ) until at least the oxide layer (26) located in the bottom area ( ) is exposed. Afterwards, the exposed oxide layer ( ) is etched until it is at least severed. In addition, the invention relates to an aperture ( ) in a semiconductor material ( ) especially produced according to the inventive method, and to different uses of such an aperture ( ).