The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Nov. 09, 1999
Applicant:
Inventors:
Tammy Zheng, Fremont, CA (US);
Calvin Todd Gabriel, Cupertino, CA (US);
Assignee:
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A semiconductor device is manufactured using a small amount of nitrogen in the gate electrode etch process to minimize notching at the bottom of the electrode. Consistent with one embodiment of the present invention, the gate electrode etch process includes using a plasma-etch and selectively etching into the device layer to form the electrode with its lower sidewalls protected using a relatively small percentage of nitrogen in the plasma gas flow.